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2SD2114KT146V datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SD2114KT146V
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 2296
- Description: 2SD2114KT146V datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Contact Plating | Copper, Silver, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Terminal Finish | TIN/TIN COPPER |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 200mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 500mA |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SD2114 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 350MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 820 @ 10mA 3V |
| Current - Collector Cutoff (Max) | 500nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
| Collector Emitter Breakdown Voltage | 20V |
| Transition Frequency | 350MHz |
| Collector Emitter Saturation Voltage | 180mV |
| Max Breakdown Voltage | 20V |
| Collector Base Voltage (VCBO) | 25V |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 820 |
| Continuous Collector Current | 500mA |
| VCEsat-Max | 0.4 V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SD2114KT146V Overview
This device has a DC current gain of 820 @ 10mA 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 180mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 20mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The base voltage of the emitter can be kept at 12V to achieve high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.There is a transition frequency of 350MHz in the part.As a result, it can handle voltages as low as 20V volts.The maximum collector current is 500mA volts.
2SD2114KT146V Features
the DC current gain for this device is 820 @ 10mA 3V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 350MHz
2SD2114KT146V Applications
There are a lot of ROHM Semiconductor 2SD2114KT146V applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
