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2SD1898T100R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SD1898T100R
- Package: TO-243AA
- Datasheet:
- Stock: 3596
- Description: 2SD1898T100R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 80V |
| Max Power Dissipation | 2W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 1A |
| Frequency | 100MHz |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SD1898 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA 3V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 400mV |
| Max Breakdown Voltage | 80V |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 82 |
| Continuous Collector Current | 1A |
| Height | 1.4mm |
| Length | 4.7mm |
| Width | 2.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SD1898T100R Overview
In this device, the DC current gain is 180 @ 500mA 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).For high efficiency, the continuous collector voltage must be kept at 1A.Emitter base voltages of 5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.Parts of this part have transition frequencies of 100MHz.An input voltage of 80V volts is the breakdown voltage.During maximum operation, collector current can be as low as 1A volts.
2SD1898T100R Features
the DC current gain for this device is 180 @ 500mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
2SD1898T100R Applications
There are a lot of ROHM Semiconductor 2SD1898T100R applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
