2SD1835T

2SD1835T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-2SD1835T
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: pdf
  • Stock: 1067
  • Description: 2SD1835T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2011
JESD-609 Code e2
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
Max Power Dissipation 750mW
Base Part Number 2SD1835
Pin Count 3
Power - Max 750mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
RoHS Status RoHS Compliant
Lead Free Lead Free

2SD1835T Overview


This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.When VCE saturation is 400mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 6V, an efficient operation can be achieved.Maximum collector currents can be below 2A volts.

2SD1835T Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V

2SD1835T Applications


There are a lot of ON Semiconductor 2SD1835T applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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