2SD1835S-AA

2SD1835S-AA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-2SD1835S-AA
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: pdf
  • Stock: 6414
  • Description: 2SD1835S-AA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 750mW
Base Part Number 2SD1835
Pin Count 3
Element Configuration Single
Gain Bandwidth Product 150MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 50V
Max Frequency 150MHz
Collector Emitter Saturation Voltage 150mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
Height 5mm
Length 5mm
Width 4mm
RoHS Status RoHS Compliant
Lead Free Lead Free

2SD1835S-AA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 100mA 2V DC current gain.The collector emitter saturation voltage is 150mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 1A.Emitter base voltages of 6V can achieve high levels of efficiency.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

2SD1835S-AA Features


the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V

2SD1835S-AA Applications


There are a lot of ON Semiconductor 2SD1835S-AA applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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