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2SD1816T-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SD1816T-E
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 486
- Description: 2SD1816T-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Case Connection | COLLECTOR |
| Power - Max | 1W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 180MHz |
| Frequency - Transition | 180MHz |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 70 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | LIFETIME (Last Updated: 3 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| HTS Code | 8541.29.00.75 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1W |
| Terminal Position | SINGLE |
| Base Part Number | 2SD1816 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
2SD1816T-E Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 5V.A VCE saturation (Max) of 400mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Emitter base voltages of 6V can achieve high levels of efficiency.A transition frequency of 180MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
2SD1816T-E Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz
2SD1816T-E Applications
There are a lot of ON Semiconductor 2SD1816T-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
