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2SD1815T-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SD1815T-H
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 7384
- Description: 2SD1815T-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Lifecycle Status | LIFETIME (Last Updated: 1 week ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Surface Mount | NO |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | 2SD1815 |
| Configuration | Single |
| Power - Max | 1W |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 150mA, 1.5A |
| Collector Emitter Breakdown Voltage | 100V |
| Frequency - Transition | 180MHz |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 70 |
| RoHS Status | RoHS Compliant |
2SD1815T-H Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 500mA 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 150mA, 1.5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SD1815T-H Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 400mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
2SD1815T-H Applications
There are a lot of ON Semiconductor 2SD1815T-H applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
