2SD1815T-E

2SD1815T-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi


  • Manufacturer: Rochester Electronics
  • NO: 699-2SD1815T-E
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: pdf
  • Stock: 513
  • Description: 2SD1815T-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 150mA, 1.5A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 180MHz
RoHS Status ROHS3 Compliant

2SD1815T-E Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 70 @ 500mA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Supplier device package TP comes with the product.Detection of Collector Emitter Breakdown at 100V maximal voltage is present.

2SD1815T-E Features


the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 400mV @ 150mA, 1.5A
the supplier device package of TP

2SD1815T-E Applications


There are a lot of Rochester Electronics, LLC 2SD1815T-E applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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