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2SD1805F-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SD1805F-TL-E
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 4644
- Description: 2SD1805F-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 15W |
| Reach Compliance Code | not_compliant |
| Base Part Number | 2SD1805 |
| Pin Count | 3 |
| Element Configuration | Single |
| Power - Max | 1W |
| Gain Bandwidth Product | 120MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 500mV |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 60mA, 3A |
| Collector Emitter Breakdown Voltage | 20V |
| Current - Collector (Ic) (Max) | 5A |
| Max Frequency | 120MHz |
| Collector Emitter Saturation Voltage | 220mV |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 160 |
| Height | 2.3mm |
| Length | 6.5mm |
| Width | 5.5mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SD1805F-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 500mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 220mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 60mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A maximum collector current of 5A volts can be achieved.
2SD1805F-TL-E Features
the DC current gain for this device is 160 @ 500mA 2V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V
2SD1805F-TL-E Applications
There are a lot of ON Semiconductor 2SD1805F-TL-E applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
