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2SD1803S-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SD1803S-E
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 3459
- Description: 2SD1803S-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2003 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Max Power Dissipation | 1W |
| Reach Compliance Code | not_compliant |
| Frequency | 180MHz |
| Base Part Number | 2SD1803 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation | 1W |
| Gain Bandwidth Product | 180MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 150mA, 3A |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 55 |
| Continuous Collector Current | 5A |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SD1803S-E Overview
DC current gain in this device equals 140 @ 500mA 2V, which is the ratio of the base current to the collector current.When VCE saturation is 400mV @ 150mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at 5A to achieve high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Maximum collector currents can be below 5A volts.
2SD1803S-E Features
the DC current gain for this device is 140 @ 500mA 2V
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 6V
2SD1803S-E Applications
There are a lot of ON Semiconductor 2SD1803S-E applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
