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2SD1733TLP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SD1733TLP
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 2798
- Description: 2SD1733TLP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper (Sn98Cu2) |
| HTS Code | 8541.29.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 80V |
| Max Power Dissipation | 1W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Current Rating | 1A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SD1733 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power - Max | 10W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 100MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA 3V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
| Collector Emitter Breakdown Voltage | 80V |
| Transition Frequency | 100MHz |
| Max Breakdown Voltage | 80V |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 82 |
| Continuous Collector Current | 1A |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SD1733TLP Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 500mA 3V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 20mA, 500mA.Continuous collector voltage should be kept at 1A for high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).Parts of this part have transition frequencies of 100MHz.Single BJT transistor can be broken down at a voltage of 80V volts.The maximum collector current is 1A volts.
2SD1733TLP Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
2SD1733TLP Applications
There are a lot of ROHM Semiconductor 2SD1733TLP applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
