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2SD1624T-TD-E
  • 2SD1624T-TD-E

2SD1624T-TD-E

2SD1624T-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-2SD1624T-TD-E
  • Package: TO-243AA
  • Datasheet: pdf
  • Stock: 4733
  • Description: 2SD1624T-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 500mW
Terminal Form FLAT
Frequency 150MHz
Base Part Number 2SD1624
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 2A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 350mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2SD1624T-TD-E Overview


In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 350mV allows maximum design flexibility.A VCE saturation (Max) of 500mV @ 100mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.In this part, there is a transition frequency of 150MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.

2SD1624T-TD-E Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz

2SD1624T-TD-E Applications


There are a lot of ON Semiconductor 2SD1624T-TD-E applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter
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