2SD1618S-TD-E

2SD1618S-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-2SD1618S-TD-E
  • Package: TO-243AA
  • Datasheet: pdf
  • Stock: 2396
  • Description: 2SD1618S-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 38 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory Other Transistors
Max Power Dissipation 500mW
Terminal Position SINGLE
Terminal Form FLAT
Pin Count 3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 500mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 700mA
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 50mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 80mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 15V
Transition Frequency 250MHz
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 5V
hFE Min 140
RoHS Status RoHS Compliant
Lead Free Lead Free

2SD1618S-TD-E Overview


In this device, the DC current gain is 140 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.250MHz is present in the transition frequency.During maximum operation, collector current can be as low as 700mA volts.

2SD1618S-TD-E Features


the DC current gain for this device is 140 @ 50mA 2V
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz

2SD1618S-TD-E Applications


There are a lot of ON Semiconductor 2SD1618S-TD-E applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

In Stock

Please send RFQ , we will respond immediately.