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2SD1207T-AE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SD1207T-AE
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 341
- Description: 2SD1207T-AE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
| HTS Code | 8541.29.00.75 |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Base Part Number | 2SD1207 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 1A |
| Collector Emitter Breakdown Voltage | 50V |
| Max Frequency | 150MHz |
| Transition Frequency | 150MHz |
| Collector Emitter Saturation Voltage | 150mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 140 |
| Height | 8.5mm |
| Length | 6mm |
| Width | 4.7mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
2SD1207T-AE Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 2V.A collector emitter saturation voltage of 150mV allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 6V for high efficiency.There is a transition frequency of 150MHz in the part.This device can take an input voltage of 50V volts before it breaks down.During maximum operation, collector current can be as low as 2A volts.
2SD1207T-AE Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1207T-AE Applications
There are a lot of ON Semiconductor 2SD1207T-AE applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
