2SD1048-6-TB-E

2SD1048-6-TB-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-2SD1048-6-TB-E
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 7679
  • Description: 2SD1048-6-TB-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory Other Transistors
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 250MHz
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 700mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 50mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 80mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 15V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 80mV
Max Breakdown Voltage 15V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Height 1.1mm
Length 2.9mm
Width 1.5mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2SD1048-6-TB-E Overview


In this device, the DC current gain is 200 @ 50mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 80mV, which allows for maximum design flexibility.When VCE saturation is 80mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 250MHz.Single BJT transistor can take a breakdown input voltage of 15V volts.Collector current can be as low as 700mA volts at its maximum.

2SD1048-6-TB-E Features


the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz

2SD1048-6-TB-E Applications


There are a lot of ON Semiconductor 2SD1048-6-TB-E applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

In Stock

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