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2SD1012G-SPA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SD1012G-SPA
- Package: 3-SIP
- Datasheet:
- Stock: 4779
- Description: 2SD1012G-SPA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | 3-SIP |
| Surface Mount | NO |
| Number of Pins | 3 |
| Operating Temperature | 125°C TJ |
| Packaging | Bulk |
| Published | 2012 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 250mW |
| Base Part Number | 2SD1012 |
| Pin Count | 3 |
| Element Configuration | Single |
| Gain Bandwidth Product | 250MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 15V |
| Max Collector Current | 700mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 50mA 2V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 80mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 15V |
| Current - Collector (Ic) (Max) | 700mA |
| Collector Emitter Saturation Voltage | 30mV |
| Collector Base Voltage (VCBO) | 20V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 280 |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
2SD1012G-SPA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 280 @ 50mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 30mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 80mV @ 10mA, 100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The maximum collector current is 700mA volts.
2SD1012G-SPA Features
the DC current gain for this device is 280 @ 50mA 2V
a collector emitter saturation voltage of 30mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
2SD1012G-SPA Applications
There are a lot of ON Semiconductor 2SD1012G-SPA applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
