2SCR523UBTL

2SCR523UBTL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • NO: 687-2SCR523UBTL
  • Package: SC-85
  • Datasheet: pdf
  • Stock: 4272
  • Description: 2SCR523UBTL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-85
Number of Pins 85
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
JESD-30 Code R-PDSO-F3
Number of Elements 1
Element Configuration Single
Power - Max 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 350MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 350MHz
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Continuous Collector Current 200mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2SCR523UBTL Overview


In this device, the DC current gain is 120 @ 1mA 6V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 100mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 200mA to achieve high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In this part, there is a transition frequency of 350MHz.A breakdown input voltage of 50V volts can be used.Collector current can be as low as 100mA volts at its maximum.

2SCR523UBTL Features


the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 350MHz

2SCR523UBTL Applications


There are a lot of ROHM Semiconductor 2SCR523UBTL applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

In Stock

Please send RFQ , we will respond immediately.