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2SCR514PT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SCR514PT100
- Package: TO-243AA
- Datasheet:
- Stock: 3527
- Description: 2SCR514PT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2W |
| Terminal Position | SINGLE |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SCR514 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 2W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Collector Current | 700mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA 3V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 15mA, 300mA |
| Collector Emitter Breakdown Voltage | 80V |
| Max Frequency | 320MHz |
| Transition Frequency | 320MHz |
| Max Breakdown Voltage | 80V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 120 |
| Continuous Collector Current | 700mA |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SCR514PT100 Overview
In this device, the DC current gain is 120 @ 100mA 3V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 15mA, 300mA.A constant collector voltage of 700mA is necessary for high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.There is a transition frequency of 320MHz in the part.Single BJT transistor can take a breakdown input voltage of 80V volts.A maximum collector current of 700mA volts can be achieved.
2SCR514PT100 Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 300mV @ 15mA, 300mA
the emitter base voltage is kept at 6V
a transition frequency of 320MHz
2SCR514PT100 Applications
There are a lot of ROHM Semiconductor 2SCR514PT100 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
