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2SCR513PT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SCR513PT100
- Package: TO-243AA
- Datasheet:
- Stock: 1625
- Description: 2SCR513PT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 360MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 50mA 2V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 25mA, 500mA |
| Collector Emitter Breakdown Voltage | 50V |
| Current - Collector (Ic) (Max) | 1A |
| Transition Frequency | 360MHz |
| Collector Emitter Saturation Voltage | 130mV |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 180 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SCR513PT100 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 50mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 130mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 350mV @ 25mA, 500mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.As a result, the part has a transition frequency of 360MHz.During maximum operation, collector current can be as low as 1A volts.
2SCR513PT100 Features
the DC current gain for this device is 180 @ 50mA 2V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 360MHz
2SCR513PT100 Applications
There are a lot of ROHM Semiconductor 2SCR513PT100 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
