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2SCR375P5T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SCR375P5T100Q
- Package: TO-243AA
- Datasheet:
- Stock: 835
- Description: 2SCR375P5T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 300mV |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 200mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 80mA, 800mA |
| Collector Emitter Breakdown Voltage | 120V |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 120V |
| Frequency - Transition | 200MHz |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 13 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 500mW |
| Terminal Position | SINGLE |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-F3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Power - Max | 500mW |
2SCR375P5T100Q Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 200mA 5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 80mA, 800mA.Parts of this part have transition frequencies of 200MHz.There is a breakdown input voltage of 120V volts that it can take.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
2SCR375P5T100Q Features
the DC current gain for this device is 120 @ 200mA 5V
the vce saturation(Max) is 300mV @ 80mA, 800mA
a transition frequency of 200MHz
2SCR375P5T100Q Applications
There are a lot of ROHM Semiconductor 2SCR375P5T100Q applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
