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2SC6099-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SC6099-TL-E
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 8018
- Description: 2SC6099-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Max Power Dissipation | 800mW |
| Frequency | 300MHz |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 800mW |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 165mV |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 165mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 165mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 6.5V |
| hFE Min | 300 |
| Height | 2.3mm |
| Length | 6.5mm |
| Width | 5.5mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SC6099-TL-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 100mA 5V DC current gain.With a collector emitter saturation voltage of 165mV, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 165mV @ 100mA, 1A.Keeping the emitter base voltage at 6.5V allows for a high level of efficiency.Single BJT transistor can take a breakdown input voltage of 100V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
2SC6099-TL-E Features
the DC current gain for this device is 300 @ 100mA 5V
a collector emitter saturation voltage of 165mV
the vce saturation(Max) is 165mV @ 100mA, 1A
the emitter base voltage is kept at 6.5V
2SC6099-TL-E Applications
There are a lot of ON Semiconductor 2SC6099-TL-E applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
