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2SC5868TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SC5868TLQ
- Package: SC-96
- Datasheet:
- Stock: 5215
- Description: 2SC5868TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 40 Weeks |
| Contact Plating | Copper, Silver, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-96 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 500mA |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SC5868 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 50mA 2V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 300MHz |
| Collector Emitter Saturation Voltage | 75mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 120 |
| Continuous Collector Current | 500mA |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SC5868TLQ Overview
In this device, the DC current gain is 120 @ 50mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 75mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As you can see, the part has a transition frequency of 300MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts can be achieved.
2SC5868TLQ Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 75mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 300MHz
2SC5868TLQ Applications
There are a lot of ROHM Semiconductor 2SC5868TLQ applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
