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2SC5866TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SC5866TLQ
- Package: SC-96
- Datasheet:
- Stock: 5174
- Description: 2SC5866TLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Collector Emitter Saturation Voltage | 200mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 120 |
| Continuous Collector Current | 2A |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 20 Weeks |
| Contact Plating | Copper, Silver, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-96 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2A |
| Frequency | 200MHz |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SC5866 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 200MHz |
2SC5866TLQ Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 100mA, 1A.Continuous collector voltages of 2A should be maintained to achieve high efficiency.Keeping the emitter base voltage at 6V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Parts of this part have transition frequencies of 200MHz.Input voltage breakdown is available at 60V volts.Maximum collector currents can be below 2A volts.
2SC5866TLQ Features
the DC current gain for this device is 120 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 200MHz
2SC5866TLQ Applications
There are a lot of ROHM Semiconductor 2SC5866TLQ applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
