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2SC5706-P-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SC5706-P-E
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 814
- Description: 2SC5706-P-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Packaging | Bulk |
| Published | 2016 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Power Dissipation | 800mW |
| Power - Max | 800mW |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 240mV |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 240mV @ 100mA, 2A |
| Collector Emitter Breakdown Voltage | 100V |
| Frequency - Transition | 400MHz |
| RoHS Status | ROHS3 Compliant |
2SC5706-P-E Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 240mV @ 100mA, 2A.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
2SC5706-P-E Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 240mV @ 100mA, 2A
2SC5706-P-E Applications
There are a lot of ON Semiconductor 2SC5706-P-E applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
