2SC5661T2LP

2SC5661T2LP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • NO: 687-2SC5661T2LP
  • Package: SOT-723
  • Datasheet: pdf
  • Stock: 6663
  • Description: 2SC5661T2LP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 13 Weeks
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 18V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 50mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SC5661
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 1.5 GHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 10mA 10V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 20mA
Collector Emitter Breakdown Voltage 20V
Transition Frequency 1500MHz
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
hFE Min 56
Continuous Collector Current 50mA
Highest Frequency Band VERY HIGH FREQUENCY B
Collector-Base Capacitance-Max 1.5pF
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2SC5661T2LP Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 82 @ 10mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 4mA, 20mA.For high efficiency, the continuous collector voltage must be kept at 50mA.The emitter base voltage can be kept at 3V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50mA current rating.There is a transition frequency of 1500MHz in the part.As a result, it can handle voltages as low as 20V volts.When collector current reaches its maximum, it can reach 50mA volts.

2SC5661T2LP Features


the DC current gain for this device is 82 @ 10mA 10V
the vce saturation(Max) is 500mV @ 4mA, 20mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 1500MHz

2SC5661T2LP Applications


There are a lot of ROHM Semiconductor 2SC5661T2LP applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

In Stock

Please send RFQ , we will respond immediately.