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2SC5659T2LP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SC5659T2LP
- Package: SOT-723
- Datasheet:
- Stock: 5556
- Description: 2SC5659T2LP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper (Sn/Cu) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 150mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 50mA |
| Frequency | 300MHz |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SC5659 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 150mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 300MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 25V |
| Max Collector Current | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 1mA 6V |
| Current - Collector Cutoff (Max) | 500nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 300MHz |
| Max Breakdown Voltage | 25V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 82 |
| Continuous Collector Current | 50mA |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SC5659T2LP Overview
This device has a DC current gain of 82 @ 1mA 6V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A 50mA continuous collector voltage is necessary to achieve high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50mA current rating.The part has a transition frequency of 300MHz.Single BJT transistor can be broken down at a voltage of 25V volts.The maximum collector current is 50mA volts.
2SC5659T2LP Features
the DC current gain for this device is 82 @ 1mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 300MHz
2SC5659T2LP Applications
There are a lot of ROHM Semiconductor 2SC5659T2LP applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
