2SC5658T2LQ

2SC5658T2LQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • NO: 687-2SC5658T2LQ
  • Package: SOT-723
  • Datasheet: pdf
  • Stock: 7358
  • Description: 2SC5658T2LQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 13 Weeks
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 150mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SC5658
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 150mW
Gain Bandwidth Product 180MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 180MHz
Transition Frequency 180MHz
Collector Emitter Saturation Voltage 400mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
hFE Min 120
Continuous Collector Current 150mA
Height 500μm
Length 1.2mm
Width 800μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2SC5658T2LQ Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 150mA to achieve high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.The current rating of this fuse is 150mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.180MHz is present in the transition frequency.This device can take an input voltage of 50V volts before it breaks down.During maximum operation, collector current can be as low as 150mA volts.

2SC5658T2LQ Features


the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
the current rating of this device is 150mA
a transition frequency of 180MHz

2SC5658T2LQ Applications


There are a lot of ROHM Semiconductor 2SC5658T2LQ applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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