2SC5232BTE85LF

Bipolar Transistors - BJT Transistor Lo Freq NPN 0.5A 12V


  • Manufacturer: Toshiba Semiconductor and Storage
  • NO: 4669-2SC5232BTE85LF
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 5991
  • Description: Bipolar Transistors - BJT Transistor Lo Freq NPN 0.5A 12V(Kg)

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  • Delivery: Delivery
  • Payment: payment

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Max Power Dissipation 150mW
Element Configuration Single
Power - Max 150mW
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 10mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 200mA
Collector Emitter Breakdown Voltage 12V
Transition Frequency 80MHz
Collector Emitter Saturation Voltage 110mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 5V
hFE Min 300
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.