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NPN150°C TJ5μA ICBOTO-3P-3, SC-65-3TubeThrough Hole
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-2SC5200N(S1,E,S)
- Package: TO-3P-3, SC-65-3
- Datasheet:
- Stock: 9809
- Description: NPN150°C TJ5μA ICBOTO-3P-3, SC-65-3TubeThrough Hole(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Weight | 6.961991g |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Max Power Dissipation | 150W |
| Element Configuration | Single |
| Gain Bandwidth Product | 30MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 230V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A 5V |
| Current - Collector Cutoff (Max) | 5μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Collector Emitter Breakdown Voltage | 230V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Base Voltage (VCBO) | 230V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 35 |
| Continuous Collector Current | 15A |
| RoHS Status | RoHS Compliant |
2SC5200N(S1,E,S) Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 1A 5V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is recommended to keep the continuous collector voltage at 15A in order to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.In extreme cases, the collector current can be as low as 15A volts.
2SC5200N(S1,E,S) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
2SC5200N(S1,E,S) Applications
There are a lot of Toshiba Semiconductor and Storage 2SC5200N(S1,E,S) applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
