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NPN150°C TJ5μA ICBO1 ElementsNPNTO-3PLTubeThrough Hole
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-2SC5200-O(Q)
- Package: TO-3PL
- Datasheet:
- Stock: 9818
- Description: NPN150°C TJ5μA ICBO1 ElementsNPNTO-3PLTubeThrough Hole(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A |
| Collector Emitter Breakdown Voltage | 230V |
| Collector Base Voltage (VCBO) | 230V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 80 |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Contact Plating | Copper, Silver, Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3PL |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 230V |
| Max Power Dissipation | 150W |
| Current Rating | 15A |
| Frequency | 30MHz |
| Base Part Number | 2SC5200 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 150W |
| Gain Bandwidth Product | 30MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 230V |
| Max Collector Current | 15A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A 5V |
| Current - Collector Cutoff (Max) | 5μA ICBO |
2SC5200-O(Q) Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 1A 5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 800mA, 8A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 15A for this device.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
2SC5200-O(Q) Features
the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
2SC5200-O(Q) Applications
There are a lot of Toshiba Semiconductor and Storage 2SC5200-O(Q) applications of single BJT transistors.
Inverter
Muting
Driver
Interface
