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2SC4617G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SC4617G
- Package: SC-75, SOT-416
- Datasheet:
- Stock: 3952
- Description: 2SC4617G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA 6V |
| Current - Collector Cutoff (Max) | 500nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 60mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 180MHz |
| Collector Emitter Saturation Voltage | 400mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 120 |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | SC-75, SOT-416 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 50V |
| Max Power Dissipation | 125mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 100mA |
| Frequency | 180MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | 2SC4617 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 125mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 180MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 100mA |
2SC4617G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 6V.A collector emitter saturation voltage of 400mV allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 60mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 180MHz.This device can take an input voltage of 50V volts before it breaks down.The maximum collector current is 100mA volts.
2SC4617G Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 60mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 180MHz
2SC4617G Applications
There are a lot of ON Semiconductor 2SC4617G applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
