2SC4617EBTLR

2SC4617EBTLR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • NO: 687-2SC4617EBTLR
  • Package: SC-89, SOT-490
  • Datasheet: pdf
  • Stock: 6655
  • Description: 2SC4617EBTLR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 9 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-89, SOT-490
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 2SC4617
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 180MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 50V
Max Frequency 100MHz
Transition Frequency 180MHz
Collector Emitter Saturation Voltage 400mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
hFE Min 120
Continuous Collector Current 150mA
Height 700μm
Length 1.6mm
Width 860μm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2SC4617EBTLR Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 6V.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 50mA.Continuous collector voltage should be kept at 150mA for high efficiency.Keeping the emitter base voltage at 7V allows for a high level of efficiency.There is a transition frequency of 180MHz in the part.There is a breakdown input voltage of 50V volts that it can take.During maximum operation, collector current can be as low as 150mA volts.

2SC4617EBTLR Features


the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 7V
a transition frequency of 180MHz

2SC4617EBTLR Applications


There are a lot of ROHM Semiconductor 2SC4617EBTLR applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

In Stock

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