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2SC4617EBHZGTLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SC4617EBHZGTLQ
- Package: SC-89, SOT-490
- Datasheet:
- Stock: 8648
- Description: 2SC4617EBHZGTLQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | SC-89, SOT-490 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Power - Max | 150mW |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA 6V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 150mA |
| Frequency - Transition | 180MHz |
| RoHS Status | ROHS3 Compliant |
2SC4617EBHZGTLQ Overview
DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 500mA.Device displays Collector Emitter Breakdown (50V maximal voltage).
2SC4617EBHZGTLQ Features
the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 400mV @ 5mA, 500mA
2SC4617EBHZGTLQ Applications
There are a lot of ROHM Semiconductor 2SC4617EBHZGTLQ applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
