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2SC4116-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-2SC4116-Y,LF
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 1576
- Description: 2SC4116-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Power Dissipation | 100mW |
| Reach Compliance Code | unknown |
| Gain Bandwidth Product | 80MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 150mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA 6V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 100mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 70 |
| Continuous Collector Current | 150mA |
| Height | 900μm |
| Length | 2mm |
| Width | 1.25mm |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Silver, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Weight | 6.208546mg |
| Operating Temperature | 125°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2011 |
| Pbfree Code | yes |
2SC4116-Y,LF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 2mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 100mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Continuous collector voltages should be kept at 150mA to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.A breakdown input voltage of 50V volts can be used.In extreme cases, the collector current can be as low as 150mA volts.
2SC4116-Y,LF Features
the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
2SC4116-Y,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SC4116-Y,LF applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
