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2SC4116-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-2SC4116-GR,LF
- Package: SC-70, SOT-323
- Datasheet:
- Stock: 1699
- Description: 2SC4116-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Silver, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Weight | 6.208546mg |
| Operating Temperature | 125°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Power Dissipation | 100mW |
| Reach Compliance Code | unknown |
| Base Part Number | 2SC4116 |
| Gain Bandwidth Product | 80MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 150mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 2mA 6V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 100mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 70 |
| Continuous Collector Current | 150mA |
| Height | 900μm |
| Length | 2mm |
| Width | 1.25mm |
| RoHS Status | RoHS Compliant |
2SC4116-GR,LF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 70 @ 2mA 6V.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.Continuous collector voltage should be kept at 150mA for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As a result, it can handle voltages as low as 50V volts.When collector current reaches its maximum, it can reach 150mA volts.
2SC4116-GR,LF Features
the DC current gain for this device is 70 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
2SC4116-GR,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SC4116-GR,LF applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
