2SC4102T106R

2SC4102T106R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • NO: 687-2SC4102T106R
  • Package: SC-70, SOT-323
  • Datasheet: pdf
  • Stock: 4287
  • Description: 2SC4102T106R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 10 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 50mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SC4102
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 140MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 6V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 120V
Max Frequency 100MHz
Transition Frequency 140MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 120V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 180
Continuous Collector Current 50mA
Height 900μm
Length 2.1mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2SC4102T106R Overview


This device has a DC current gain of 180 @ 2mA 6V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 1mA, 10mA.Continuous collector voltage should be kept at 50mA for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 50mA for this device.There is a transition frequency of 140MHz in the part.The breakdown input voltage is 120V volts.Maximum collector currents can be below 50mA volts.

2SC4102T106R Features


the DC current gain for this device is 180 @ 2mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 140MHz

2SC4102T106R Applications


There are a lot of ROHM Semiconductor 2SC4102T106R applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

In Stock

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