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2SC3646T-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SC3646T-TD-E
- Package: TO-243AA
- Datasheet:
- Stock: 876
- Description: 2SC3646T-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 40mA, 400mA |
| Collector Emitter Breakdown Voltage | 100V |
| Max Frequency | 1MHz |
| Transition Frequency | 120MHz |
| Collector Emitter Saturation Voltage | 100mV |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 1.5mm |
| Length | 4.5mm |
| Width | 2.5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Max Power Dissipation | 500mW |
| Terminal Form | FLAT |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 120MHz |
2SC3646T-TD-E Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 100mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 40mA, 400mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.As a result, the part has a transition frequency of 120MHz.This device can take an input voltage of 100V volts before it breaks down.Maximum collector currents can be below 1A volts.
2SC3646T-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SC3646T-TD-E Applications
There are a lot of ON Semiconductor 2SC3646T-TD-E applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
