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2SC3265-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-2SC3265-Y,LF
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 467
- Description: 2SC3265-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 200mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 120MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA 1V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 500mA |
| Collector Emitter Breakdown Voltage | 25V |
| Transition Frequency | 120MHz |
| Collector Emitter Saturation Voltage | 400mV |
| Max Breakdown Voltage | 25V |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 40 |
| Continuous Collector Current | 800mA |
| RoHS Status | RoHS Compliant |
2SC3265-Y,LF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 500mA.Maintaining the continuous collector voltage at 800mA is essential for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.A breakdown input voltage of 25V volts can be used.Collector current can be as low as 800mA volts at its maximum.
2SC3265-Y,LF Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
2SC3265-Y,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SC3265-Y,LF applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
