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2SC2712-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-2SC2712-Y,LF
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 7456
- Description: 2SC2712-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Transition Frequency | 80MHz |
| Collector Emitter Saturation Voltage | 100mV |
| Max Breakdown Voltage | 50V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 70 |
| Continuous Collector Current | 150mA |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 125°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Additional Feature | LOW NOISE |
| Max Power Dissipation | 150mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | 2SC2712 |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 80MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 150mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA 6V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Collector Emitter Breakdown Voltage | 50V |
2SC2712-Y,LF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 6V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 100mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In order to achieve high efficiency, the continuous collector voltage should be kept at 150mA.The emitter base voltage can be kept at 5V for high efficiency.As a result, the part has a transition frequency of 80MHz.As a result, it can handle voltages as low as 50V volts.In extreme cases, the collector current can be as low as 150mA volts.
2SC2712-Y,LF Features
the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz
2SC2712-Y,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SC2712-Y,LF applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
