2SC2712-GR,LF

2SC2712-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi


  • Manufacturer: Toshiba Semiconductor and Storage
  • NO: 4669-2SC2712-GR,LF
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 2267
  • Description: 2SC2712-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 150mW
Reach Compliance Code unknown
Base Part Number 2SC2712
Element Configuration Single
Power - Max 150mW
Gain Bandwidth Product 80MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
RoHS Status RoHS Compliant

2SC2712-GR,LF Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 2mA 6V DC current gain.The collector emitter saturation voltage is 100mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 150mA volts at its maximum.

2SC2712-GR,LF Features


the DC current gain for this device is 70 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V

2SC2712-GR,LF Applications


There are a lot of Toshiba Semiconductor and Storage 2SC2712-GR,LF applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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