2SC2413KT146Q

2SC2413KT146Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • NO: 687-2SC2413KT146Q
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 8697
  • Description: 2SC2413KT146Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 10 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 50mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SC2413
Pin Count 3
Number of Elements 1
Element Configuration Single
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 25V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 100mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 82
Continuous Collector Current 50mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

2SC2413KT146Q Overview


DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 100mV, it allows for maximum design flexibility.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A constant collector voltage of 50mA is necessary for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is 50mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.There is a breakdown input voltage of 25V volts that it can take.During maximum operation, collector current can be as low as 50mA volts.

2SC2413KT146Q Features


the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 300MHz

2SC2413KT146Q Applications


There are a lot of ROHM Semiconductor 2SC2413KT146Q applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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