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2SB815-6-TB-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-2SB815-6-TB-E
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 457
- Description: 2SB815-6-TB-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Current - Collector (Ic) (Max) | 700mA |
| Max Frequency | 250MHz |
| Transition Frequency | 250MHz |
| Collector Emitter Saturation Voltage | -15mV |
| Collector Base Voltage (VCBO) | -20V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 200 |
| Height | 1.1mm |
| Length | 2.9mm |
| Width | 1.5mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 125°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 200mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Gain Bandwidth Product | 250MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 15V |
| Max Collector Current | 700mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 50mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 80mV @ 10mA, 100mA |
2SB815-6-TB-E Overview
In this device, the DC current gain is 200 @ 50mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -15mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.During maximum operation, collector current can be as low as 700mA volts.
2SB815-6-TB-E Features
the DC current gain for this device is 200 @ 50mA 2V
a collector emitter saturation voltage of -15mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
2SB815-6-TB-E Applications
There are a lot of ON Semiconductor 2SB815-6-TB-E applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
