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2SB1698T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SB1698T100
- Package: TO-243AA
- Datasheet:
- Stock: 4593
- Description: 2SB1698T100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN COPPER |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Max Power Dissipation | 500mW |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SB1698 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Power - Max | 2W |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 280MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 50mA, 1A |
| Collector Emitter Breakdown Voltage | 30V |
| Max Frequency | 100MHz |
| Transition Frequency | 280MHz |
| Collector Emitter Saturation Voltage | -200mV |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | -30V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 270 |
| Continuous Collector Current | -1.5A |
| Height | 1.4mm |
| Length | 4.7mm |
| Width | 2.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SB1698T100 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 270 @ 100mA 2V DC current gain.With a collector emitter saturation voltage of -200mV, it offers maximum design flexibility.When VCE saturation is 370mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltages of -1.5A should be maintained to achieve high efficiency.An emitter's base voltage can be kept at -6V to gain high efficiency.As a result, the part has a transition frequency of 280MHz.Input voltage breakdown is available at 30V volts.The maximum collector current is 1.5A volts.
2SB1698T100 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 370mV @ 50mA, 1A
the emitter base voltage is kept at -6V
a transition frequency of 280MHz
2SB1698T100 Applications
There are a lot of ROHM Semiconductor 2SB1698T100 applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
