2SB1590KT146Q

2SB1590KT146Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • NO: 687-2SB1590KT146Q
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 1393
  • Description: 2SB1590KT146Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 20mA, 400mA
Collector Emitter Breakdown Voltage 15V
Transition Frequency 200MHz
Max Breakdown Voltage 15V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 6V
hFE Min 120
Continuous Collector Current -1A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Other Transistors
Voltage - Rated DC -15V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Frequency 200MHz
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SB1590
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz

2SB1590KT146Q Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 500mA 2V DC current gain.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 20mA, 400mA.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 200MHz in the part.This device can take an input voltage of 15V volts before it breaks down.The maximum collector current is 1A volts.

2SB1590KT146Q Features


the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 300mV @ 20mA, 400mA
the emitter base voltage is kept at 6V
the current rating of this device is -1A
a transition frequency of 200MHz

2SB1590KT146Q Applications


There are a lot of ROHM Semiconductor 2SB1590KT146Q applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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