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2SB1412TLR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SB1412TLR
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 6550
- Description: 2SB1412TLR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper (Sn98Cu2) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 1W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -5A |
| Frequency | 120MHz |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SB1412 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Gain Bandwidth Product | 120MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 500nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 4A |
| Collector Emitter Breakdown Voltage | 20V |
| Transition Frequency | 120MHz |
| Collector Emitter Saturation Voltage | 350mV |
| Max Breakdown Voltage | 20V |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 82 |
| Continuous Collector Current | -5A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SB1412TLR Overview
In this device, the DC current gain is 180 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 350mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 100mA, 4A.Continuous collector voltages should be kept at -5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -6V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -5A.There is a transition frequency of 120MHz in the part.Input voltage breakdown is available at 20V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
2SB1412TLR Features
the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at -6V
the current rating of this device is -5A
a transition frequency of 120MHz
2SB1412TLR Applications
There are a lot of ROHM Semiconductor 2SB1412TLR applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
