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2SB1412TLP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SB1412TLP
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 3885
- Description: 2SB1412TLP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper (Sn98Cu2) |
| HTS Code | 8541.29.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 1W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -5A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SB1412 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Gain Bandwidth Product | 120MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 500nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 4A |
| Collector Emitter Breakdown Voltage | 20V |
| Current - Collector (Ic) (Max) | 5A |
| Transition Frequency | 120MHz |
| Collector Base Voltage (VCBO) | -20V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 82 |
| Continuous Collector Current | -5A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SB1412TLP Overview
DC current gain in this device equals 82 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 100mA, 4A.Continuous collector voltages of -5A should be maintained to achieve high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.There is a transition frequency of 120MHz in the part.During maximum operation, collector current can be as low as 5A volts.
2SB1412TLP Features
the DC current gain for this device is 82 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 120MHz
2SB1412TLP Applications
There are a lot of ROHM Semiconductor 2SB1412TLP applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
