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2SB1326TV2Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SB1326TV2Q
- Package: 3-SIP
- Datasheet:
- Stock: 8384
- Description: 2SB1326TV2Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 3-SIP |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2004 |
| JESD-609 Code | e1 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN SILVER COPPER |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 1W |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -5A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SB1326 |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 120MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 400mV |
| Max Collector Current | 700mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 500nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 4A |
| Collector Emitter Breakdown Voltage | 80V |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Current - Collector (Ic) (Max) | 5A |
| Transition Frequency | 120MHz |
| Max Breakdown Voltage | 20V |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 120 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SB1326TV2Q Overview
This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 6V allows for a high level of efficiency.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.120MHz is present in the transition frequency.Input voltage breakdown is available at 20V volts.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.A maximum collector current of 700mA volts is possible.
2SB1326TV2Q Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 4A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 120MHz
2SB1326TV2Q Applications
There are a lot of ROHM Semiconductor 2SB1326TV2Q applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
