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2SB1316TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SB1316TL
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 8286
- Description: 2SB1316TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Gain Bandwidth Product | 50MHz |
| Transistor Type | PNP - Darlington |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A 2V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 1.5V |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 8V |
| hFE Min | 1000 |
| Continuous Collector Current | -2A |
| Height | 2.3mm |
| Length | 6.5mm |
| Width | 5.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 20 Weeks |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper (Sn98Cu2) |
| Additional Feature | BUILT-IN BIAS RESISTOR |
| HTS Code | 8541.29.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -100V |
| Max Power Dissipation | 10W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -2A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SB1316 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 2 |
| Polarity | PNP |
| Voltage | 100V |
| Element Configuration | Single |
| Current | 2A |
| Power Dissipation | 1W |
| Case Connection | COLLECTOR |
| Transistor Application | AMPLIFIER |
2SB1316TL Overview
This device has a DC current gain of 1000 @ 1A 2V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 1mA, 1A.A -2A continuous collector voltage is necessary to achieve high efficiency.The base voltage of the emitter can be kept at 8V to achieve high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -2A.50MHz is present in the transition frequency.The breakdown input voltage is 100V volts.When collector current reaches its maximum, it can reach 2A volts.
2SB1316TL Features
the DC current gain for this device is 1000 @ 1A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 8V
the current rating of this device is -2A
a transition frequency of 50MHz
2SB1316TL Applications
There are a lot of ROHM Semiconductor 2SB1316TL applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
