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2SB1308T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SB1308T100Q
- Package: TO-243AA
- Datasheet:
- Stock: 8012
- Description: 2SB1308T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 2W |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -3A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SB1308 |
| JESD-30 Code | R-PSSO-F3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Gain Bandwidth Product | 120MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 20V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 500nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 150mA, 1.5A |
| Collector Emitter Breakdown Voltage | 20V |
| Current - Collector (Ic) (Max) | 3A |
| Collector Base Voltage (VCBO) | -50V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 120 |
| Continuous Collector Current | -3A |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1998 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN COPPER |
| Subcategory | Other Transistors |
2SB1308T100Q Overview
In this device, the DC current gain is 120 @ 500mA 2V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Continuous collector voltages of -3A should be maintained to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2SB1308T100Q Features
the DC current gain for this device is 120 @ 500mA 2V
the vce saturation(Max) is 450mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is -3A
2SB1308T100Q Applications
There are a lot of ROHM Semiconductor 2SB1308T100Q applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
