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2SB1275TLP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi
- Manufacturer: ROHM Semiconductor
- NO: 687-2SB1275TLP
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 517
- Description: 2SB1275TLP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Contact Plating | Copper, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e2 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper (Sn98Cu2) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -160V |
| Max Power Dissipation | 10W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -1.5A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | 2SB1275 |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power - Max | 10W |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 2V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 160V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | -2V |
| Max Breakdown Voltage | 160V |
| Collector Base Voltage (VCBO) | -160V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 82 |
| Continuous Collector Current | -1.5A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
2SB1275TLP Overview
In this device, the DC current gain is 82 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is -2V, which allows for maximum design flexibility.A VCE saturation (Max) of 2V @ 100mA, 1A means Ic has reached its maximum value(saturated).Single BJT transistor is essential to maintain the continuous collector voltage at -1.5A to achieve high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.This device has a current rating of -1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A transition frequency of 50MHz is present in the part.A breakdown input voltage of 160V volts can be used.During maximum operation, collector current can be as low as 1.5A volts.
2SB1275TLP Features
the DC current gain for this device is 82 @ 100mA 5V
a collector emitter saturation voltage of -2V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 50MHz
2SB1275TLP Applications
There are a lot of ROHM Semiconductor 2SB1275TLP applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
