2SB1204S-TL-E

2SB1204S-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-2SB1204S-TL-E
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 4246
  • Description: 2SB1204S-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Collector Emitter Voltage (VCEO) -500mV
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 4A
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 140
Height 2.3mm
Length 6.5mm
Width 5.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory Other Transistors
Max Power Dissipation 1W
Frequency 130MHz
Base Part Number 2SB1204
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Gain Bandwidth Product 130MHz
Polarity/Channel Type PNP
Transistor Type PNP

2SB1204S-TL-E Overview


In this device, the DC current gain is 140 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 4A.Emitter base voltages of 6V can achieve high levels of efficiency.The breakdown input voltage is 50V volts.Collector current can be as low as 8A volts at its maximum.

2SB1204S-TL-E Features


the DC current gain for this device is 140 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at 6V

2SB1204S-TL-E Applications


There are a lot of ON Semiconductor 2SB1204S-TL-E applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

In Stock

Please send RFQ , we will respond immediately.